NTE Electronics
NTE229
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, TO-92, 3 PIN
PackageTO-226-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE229 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Emitter Base Voltage (VEBO) | 3V |
| Gain | 28dB |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 425mW |
| Mount | Through Hole |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 500MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE229 Datasheet
Download the complete datasheet for NTE Electronics NTE229 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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