NTE Electronics
NTE233
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Frequency700MHz
PackageTO-226-3
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE233 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 3V |
| Max Collector Current | 1uA |
| Max Frequency | 700MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| RoHS Compliant | No |
| Transition Frequency | 700MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE233 Datasheet
Download the complete datasheet for NTE Electronics NTE233 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.