NTE Electronics
NTE2362
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
PackageTO-226-3
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE2362 technical specifications.
General
Package/Case
TO-226-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
300mV
Emitter Base Voltage (VEBO)
5V
Max Collector Current
100nA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Through Hole
RoHS Compliant
No
Transition Frequency
300MHz
Compliance
RoHS
Not Compliant
Datasheet
NTE Electronics NTE2362 Datasheet
Download the complete datasheet for NTE Electronics NTE2362 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.