NTE Electronics
NTE2371
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageTO-220
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE2371 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
19A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.4nF
Leakage Current
500uA
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Number of Channels
1
Rds On Max
200mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2371 Datasheet
Download the complete datasheet for NTE Electronics NTE2371 to view detailed technical specifications.
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