NTE Electronics
NTE2373
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageTO-220
MountingThrough Hole
Power125W
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Technical Specifications
NTE Electronics NTE2373 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
11A
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.2nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
2V
Number of Channels
1
Power Dissipation
125W
Rds On Max
500mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2373 Datasheet
Download the complete datasheet for NTE Electronics NTE2373 to view detailed technical specifications.
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