NTE Electronics
NTE2374
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageTO-220
MountingThrough Hole
PolarityN
Power125W
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Technical Specifications
NTE Electronics NTE2374 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
0.61inch
Length
0.42inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Channels
1
Polarization
N
Power Dissipation
125W
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2374 Datasheet
Download the complete datasheet for NTE Electronics NTE2374 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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