NTE Electronics
NTE2375
Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
PackageTO-247
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE2375 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
41A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.8nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Through Hole
Number of Channels
1
Rds On Max
55mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2375 Datasheet
Download the complete datasheet for NTE Electronics NTE2375 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.