NTE Electronics
NTE2376
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
PackageTO-247
MountingThrough Hole
PolarityN
Power190W
Quick Jump:
Technical Specifications
NTE Electronics NTE2376 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
200V
Fall Time
62ns
Gate to Source Voltage (Vgs)
20V
Height
0.787inch
Length
0.625inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Nominal Vgs
4V
Polarization
N
Power Dissipation
190W
Rds On Max
85mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
70ns
Turn-On Delay Time
16ns
Width
0.197inch
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2376 Datasheet
Download the complete datasheet for NTE Electronics NTE2376 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
