NTE Electronics
NTE2377
Power Field-Effect Transistor, 8A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Current Rating8A
MountingThrough Hole
PolarityN
Power150W
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Technical Specifications
NTE Electronics NTE2377 technical specifications.
General
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.6R
Drain to Source Voltage (Vdss)
900V
Fall Time
150ns
Gate to Source Voltage (Vgs)
30V
Height
0.787inch
Length
0.614inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
3V
Polarization
N
Power Dissipation
150W
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
350ns
Turn-On Delay Time
20ns
Width
0.19inch
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2377 Datasheet
Download the complete datasheet for NTE Electronics NTE2377 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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