NTE2378

Power Field-Effect Transistor, 5A I(D), 900V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Resistance3.6R

MountingThrough Hole

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NTE Electronics NTE2378 technical specifications.

Continuous Drain Current (ID)

Drain to Source Voltage (Vdss)

900V

Input Capacitance

700pF

Max Power Dissipation

120W

Mount

Through Hole

Rds On Max

3.6R

Resistance

3.6R

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.