NTE Electronics
NTE2379
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageTO-220
MountingThrough Hole
PolarityN
Power125W
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Technical Specifications
NTE Electronics NTE2379 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
6.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
0.61inch
Length
0.42inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Polarization
N
Power Dissipation
125W
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
55ns
Turn-On Delay Time
32ns
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2379 Datasheet
Download the complete datasheet for NTE Electronics NTE2379 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.