NTE Electronics
NTE2382
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220
MountingThrough Hole
PolarityN
Power50W
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Technical Specifications
NTE Electronics NTE2382 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
9.2A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Height
0.61inch
Length
0.42inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Nominal Vgs
4V
Polarization
N
Power Dissipation
50W
Rds On Max
270mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
19ns
Turn-On Delay Time
8.8ns
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2382 Datasheet
Download the complete datasheet for NTE Electronics NTE2382 to view detailed technical specifications.
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