NTE Electronics
NTE2383
Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220
MountingThrough Hole
PolarityP
Power75W
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Technical Specifications
NTE Electronics NTE2383 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.61inch |
| Length | 0.42inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Polarization | P |
| Power Dissipation | 75W |
| Rds On Max | 300mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE2383 Datasheet
Download the complete datasheet for NTE Electronics NTE2383 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.