NTE Electronics
NTE2385
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
PackageTO-220
Current Rating8A
MountingThrough Hole
PolarityN
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Technical Specifications
NTE Electronics NTE2385 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.61inch |
| Length | 0.42inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Polarization | N |
| Power Dissipation | 125W |
| Rds On Max | 850mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE2385 Datasheet
Download the complete datasheet for NTE Electronics NTE2385 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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