NTE Electronics
NTE2386
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN
PackageTO-3
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE2386 technical specifications.
General
| Package/Case | TO-3 |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Rds On Max | 1.2R |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE2386 Datasheet
Download the complete datasheet for NTE Electronics NTE2386 to view detailed technical specifications.
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