NTE Electronics
NTE2392
Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN
PackageTO-3
MountingThrough Hole
PolarityN
Power150W
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Technical Specifications
NTE Electronics NTE2392 technical specifications.
General
Package/Case
TO-3
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
100V
Fall Time
100ns
Gate to Source Voltage (Vgs)
20V
Height
0.35inch
Input Capacitance
3nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
4V
Polarization
N
Power Dissipation
150W
Rds On Max
55mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
125ns
Turn-On Delay Time
35ns
Width
0.874inch
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2392 Datasheet
Download the complete datasheet for NTE Electronics NTE2392 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.