N-Channel Silicon Metal-Oxide Semiconductor FET designed for power applications. Features a 500V drain-to-source breakdown voltage and a continuous drain current rating of 9A. Offers a low on-resistance of 0.7 ohms (700mR) at a nominal gate-to-source voltage of 4V. Maximum power dissipation is 150W, with a maximum operating temperature of 150°C. Through-hole mounting package with fast switching characteristics, including turn-on delay time of 30ns and fall time of 30ns.
Resistance0.7R
Current Rating9A
MountingThrough Hole
PolarityN
Quick Jump:
Technical Specifications
NTE Electronics NTE2393 technical specifications.
General
Continuous Drain Current (ID)
9A
Current Rating
9A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
0.787inch
Length
0.614inch
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
4V
Polarization
N
Power Dissipation
150W
Rds On Max
670mR
Reach SVHC Compliant
Unknown
Resistance
0.7R
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
130ns
Turn-On Delay Time
30ns
DC Rated Voltage
500V
Width
0.19inch
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2393 Datasheet
Download the complete datasheet for NTE Electronics NTE2393 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.