N-channel silicon MOSFET featuring 500V drain-to-source breakdown voltage and 14A continuous drain current. This through-hole mounted power field-effect transistor offers a low 400mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 180W. It operates within a temperature range of -55°C to 150°C and supports a gate-to-source voltage up to 20V. Key switching characteristics include a 35ns turn-on delay and a 70ns fall time.
Current Rating12A
MountingThrough Hole
PolarityN
Power180W
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Technical Specifications
NTE Electronics NTE2394 technical specifications.
General
Continuous Drain Current (ID)
14A
Current Rating
12A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
500V
Fall Time
70ns
Gate to Source Voltage (Vgs)
20V
Height
0.787inch
Length
0.614inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
180W
Mount
Through Hole
Nominal Vgs
2V
Polarization
N
Power Dissipation
180W
Rds On Max
400mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
150ns
Turn-On Delay Time
35ns
DC Rated Voltage
450V
Width
0.19inch
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2394 Datasheet
Download the complete datasheet for NTE Electronics NTE2394 to view detailed technical specifications.
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