NTE2394

N-channel silicon MOSFET featuring 500V drain-to-source breakdown voltage and 14A continuous drain current. This through-hole mounted power field-effect transistor offers a low 400mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 180W. It operates within a temperature range of -55°C to 150°C and supports a gate-to-source voltage up to 20V. Key switching characteristics include a 35ns turn-on delay and a 70ns fall time.