NTE Electronics
NTE2396
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageTO-220
MountingThrough Hole
PolarityN
Power150W
Quick Jump:
Technical Specifications
NTE Electronics NTE2396 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.61inch |
| Input Capacitance | 1.3nF |
| Length | 0.42inch |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Polarization | N |
| Power Dissipation | 150W |
| Rds On Max | 77mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE2396 Datasheet
Download the complete datasheet for NTE Electronics NTE2396 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
