NTE Electronics
NTE2396
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
PackageTO-220
MountingThrough Hole
PolarityN
Power150W
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Technical Specifications
NTE Electronics NTE2396 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
77mR
Drain to Source Voltage (Vdss)
100V
Fall Time
48ns
Gate to Source Voltage (Vgs)
20V
Height
0.61inch
Input Capacitance
1.3nF
Length
0.42inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
2V
Polarization
N
Power Dissipation
150W
Rds On Max
77mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
40ns
Turn-On Delay Time
13ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
NTE Electronics NTE2396 Datasheet
Download the complete datasheet for NTE Electronics NTE2396 to view detailed technical specifications.
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