NTE Electronics
NTE245
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
PackageTO-3
Current Rating10A
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE245 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 4V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.35inch |
| Max Collector Current | 1mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 150W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE245 Datasheet
Download the complete datasheet for NTE Electronics NTE245 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.