NTE Electronics
NTE246
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
PackageTO-3
MountingThrough Hole
PolarityPNP
Power625mW
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Technical Specifications
NTE Electronics NTE246 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | -80V |
| Collector-emitter Voltage-Max | 4V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 1mA |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE246 Datasheet
Download the complete datasheet for NTE Electronics NTE246 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.