NTE Electronics
NTE250
Power Bipolar Transistor, 16A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin
PackageTO-3
MountingThrough Hole
PolarityPNP
Power150W
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Technical Specifications
NTE Electronics NTE250 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 4V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.35inch |
| Max Collector Current | 3mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 150W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE250 Datasheet
Download the complete datasheet for NTE Electronics NTE250 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.