NTE Electronics
NTE269
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/Epoxy, 3 Pin, ISOLATED TO-202, 3 PIN
PackageTO-202
MountingThrough Hole
PolarityPNP
Power40W
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Technical Specifications
NTE Electronics NTE269 technical specifications.
General
| Package/Case | TO-202 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 13V |
| Max Collector Current | 500nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.67W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 40W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE269 Datasheet
Download the complete datasheet for NTE Electronics NTE269 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.