NTE Electronics
NTE313
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
PackageSMD/SMT
MountingSurface Mount
Quick Jump:
Technical Specifications
NTE Electronics NTE313 technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Emitter Base Voltage (VEBO) | 4V |
| Gain | 23dB |
| Max Collector Current | 20mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -60°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| RoHS Compliant | No |
| Transition Frequency | 530MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE313 Datasheet
Download the complete datasheet for NTE Electronics NTE313 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.