NTE Electronics
NTE315
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
PackageTO-226-3
MountingThrough Hole
Quick Jump:
Technical Specifications
NTE Electronics NTE315 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 200nA |
| Max Operating Temperature | 120°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE315 Datasheet
Download the complete datasheet for NTE Electronics NTE315 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.