NTE Electronics
NTE323
Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
PackageTO-39
MountingThrough Hole
PolarityPNP
Power10W
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Technical Specifications
NTE Electronics NTE323 technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | -120V |
| Collector-emitter Voltage-Max | 2V |
| Diameter | 9.39mm |
| Emitter Base Voltage (VEBO) | 4V |
| Height | 0.26inch |
| Max Collector Current | 10uA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 10W |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 10W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE323 Datasheet
Download the complete datasheet for NTE Electronics NTE323 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.