NTE Electronics
NTE329
Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN
PackageTO-39-3
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE329 technical specifications.
General
| Package/Case | TO-39-3 |
| Collector Emitter Breakdown Voltage | 30V |
| Gain | 10dB |
| Max Collector Current | 1A |
| Max Power Dissipation | 5W |
| Mount | Through Hole |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE329 Datasheet
Download the complete datasheet for NTE Electronics NTE329 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.