NTE Electronics
NTE330
Power Bipolar Transistor, 25A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, TO-36, Metal, 2 Pin
MountingStud
Quick Jump:
Technical Specifications
NTE Electronics NTE330 technical specifications.
General
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 700mV |
| Emitter Base Voltage (VEBO) | 30V |
| Max Collector Current | 300uA |
| Max Operating Temperature | 90°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 87.5W |
| Mount | Stud |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE330 Datasheet
Download the complete datasheet for NTE Electronics NTE330 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.