NTE Electronics
NTE382
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
PackageTO-226-3
MountingThrough Hole
PolarityNPN
Power900mW
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Technical Specifications
NTE Electronics NTE382 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.344inch |
| Length | 0.118inch |
| Max Collector Current | 10uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 900mW |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| Width | 0.197inch |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE382 Datasheet
Download the complete datasheet for NTE Electronics NTE382 to view detailed technical specifications.
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