NTE Electronics
NTE384
Power Bipolar Transistor, 7A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin,
PackageTO-66
Current Rating7A
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
NTE Electronics NTE384 technical specifications.
General
| Package/Case | TO-66 |
| Collector Base Voltage (VCBO) | 375V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 7A |
| Diameter | 12.3mm |
| Emitter Base Voltage (VEBO) | 9V |
| Height | 0.295inch |
| Max Collector Current | 500uA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 45W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 350V |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE384 Datasheet
Download the complete datasheet for NTE Electronics NTE384 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.