NTE Electronics
NTE386
Power Bipolar Transistor, 20A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
PackageTO-3
Current Rating20A
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE386 technical specifications.
General
| Package/Case | TO-3 |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Saturation Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 5V |
| Current Rating | 20A |
| Diameter | 22.2mm |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 0.35inch |
| Max Collector Current | 250uA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 175W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 175W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE386 Datasheet
Download the complete datasheet for NTE Electronics NTE386 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.