NTE Electronics
NTE387
Power Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
PackageTO-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE387 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 50uA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE387 Datasheet
Download the complete datasheet for NTE Electronics NTE387 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.