NTE Electronics
NTE389
Power Bipolar Transistor, 4A I(C), 750V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,
PackageTO-3
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE389 technical specifications.
General
| Package/Case | TO-3 |
| Collector Emitter Breakdown Voltage | 750V |
| Collector Emitter Voltage (VCEO) | 750V |
| Collector-emitter Voltage-Max | 5V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 1mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 1.5kV |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE389 Datasheet
Download the complete datasheet for NTE Electronics NTE389 to view detailed technical specifications.
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