NTE Electronics
NTE455
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
PackageSOT
MountingSurface Mount
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Technical Specifications
NTE Electronics NTE455 technical specifications.
General
| Package/Case | SOT |
| Continuous Drain Current (ID) | 25mA |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 2pF |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE455 Datasheet
Download the complete datasheet for NTE Electronics NTE455 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.