NTE Electronics
NTE469
Small Signal Field-Effect Transistor, 35V, 1-Element, N-Channel, Silicon, Junction FET,
PackageTO-226-3
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE469 technical specifications.
General
| Package/Case | TO-226-3 |
| Drain to Source Voltage (Vdss) | 35V |
| Input Capacitance | 5pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE469 Datasheet
Download the complete datasheet for NTE Electronics NTE469 to view detailed technical specifications.
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