NTE Electronics
NTE473
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
PackageTO-39
MountingThrough Hole
PolarityNPN
Power175W
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Technical Specifications
NTE Electronics NTE473 technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 65V |
| Collector Emitter Breakdown Voltage | 40V |
| Emitter Base Voltage (VEBO) | 4V |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 175W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 175W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 500MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE473 Datasheet
Download the complete datasheet for NTE Electronics NTE473 to view detailed technical specifications.
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