NTE Electronics
NTE486
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39
PackageTO-39-3
MountingThrough Hole
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Technical Specifications
NTE Electronics NTE486 technical specifications.
General
| Package/Case | TO-39-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 20V |
| Emitter Base Voltage (VEBO) | 4V |
| Gain | 8.5dB |
| Max Collector Current | 150mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Transition Frequency | 2GHz |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE486 Datasheet
Download the complete datasheet for NTE Electronics NTE486 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.