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Technical Specifications
NXP 2N7002F215 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 475mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5R |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 830mW |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP 2N7002F215 Datasheet
Download the complete datasheet for NXP 2N7002F215 to view detailed technical specifications.
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