The BC53-10PA,115 PNP transistor features a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 420mW. The device is packaged in tape and reel quantities of 3000 and is RoHS compliant.
Frequency145MHz
MountingSurface Mount
PolarityPNP
Power1.65W
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Technical Specifications
NXP BC53-10PA,115 technical specifications.
General
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 145MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 420mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 1.65W |
| RoHS Compliant | Yes |
| Transition Frequency | 145MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC53-10PA,115 Datasheet
Download the complete datasheet for NXP BC53-10PA,115 to view detailed technical specifications.
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