The NXP BC850B215 is a surface mount NPN transistor with a maximum collector current of 100mA and a maximum power dissipation of 250mW. It has a maximum operating temperature range of -65°C to 150°C and is packaged in a TO-236-3 case. The transistor has a collector-emitter breakdown voltage of 45V and a collector-base voltage of 50V. It is lead-free and compliant with standard manufacturing processes.
PackageTO-236-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP BC850B215 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC850B215 Datasheet
Download the complete datasheet for NXP BC850B215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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