The BC856BW/T3 PNP transistor is a SOT-323 packaged device with a collector-emitter voltage maximum of 65V and a maximum power dissipation of 200mW. It operates over a temperature range of -65°C to 150°C. The device has a minimum current gain of 220 and a gain bandwidth product of 100MHz. The transistor is RoHS compliant and available in quantities of 10000 on tape and reel.
PackageSOT-323
PolarityPNP
Quick Jump:
Technical Specifications
NXP BC856BW/T3 technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 65V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC856BW/T3 Datasheet
Download the complete datasheet for NXP BC856BW/T3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
