The BC857BW/T3 is a PNP transistor from NXP, packaged in a SOT-323 case. It can handle a collector-emitter voltage of up to 45V and a collector power dissipation of 200mW. The device has a minimum current gain of 220 and a gain bandwidth product of 100MHz. It operates over a temperature range of -65°C to 150°C and is RoHS compliant.
PackageSOT-323
PolarityPNP
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Technical Specifications
NXP BC857BW/T3 technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 45V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 220 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BC857BW/T3 Datasheet
Download the complete datasheet for NXP BC857BW/T3 to view detailed technical specifications.
No datasheet is available for this part.
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