The BCM856BSH is a surface mount NPN transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It has a maximum power dissipation of 300mW and a transition frequency of 175MHz. The device is packaged in a TSSOP package and is available in quantities of one. The transistor is suitable for use in a variety of applications, including general-purpose switching and amplification. Operating temperature range is not specified in the provided data.
PackageTSSOP
MountingSurface Mount
Quick Jump:
Technical Specifications
NXP BCM856BSH technical specifications.
General
| Package/Case | TSSOP |
| Collector Emitter Breakdown Voltage | 65V |
| Collector-emitter Voltage-Max | 400mV |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Transition Frequency | 175MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCM856BSH Datasheet
Download the complete datasheet for NXP BCM856BSH to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
