The NXP BCM857BS/T3 is a PNP transistor packaged in a SOT-363 case. It can handle a collector-emitter voltage of up to 45V and a continuous collector current of 100mA. The device has a maximum power dissipation of 300mW and operates within a temperature range of -65°C to 150°C. The gain bandwidth product is 175MHz and the minimum current gain is 250.
PackageSOT-363
PolarityPNP
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Technical Specifications
NXP BCM857BS/T3 technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector-emitter Voltage-Max | 45V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 175MHz |
| hFE Min | 250 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCM857BS/T3 Datasheet
Download the complete datasheet for NXP BCM857BS/T3 to view detailed technical specifications.
No datasheet is available for this part.