The BCP55-10T/R is a NPN transistor from NXP, packaged in a SOT-223 case. It can handle a collector-emitter voltage of up to 60V and a continuous collector current of 1A. The device has a gain bandwidth product of 180MHz and a minimum current gain of 63. Operating temperature range is from -65°C to 150°C, and the device is RoHS compliant.
PackageSOT-223
PolarityNPN
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Technical Specifications
NXP BCP55-10T/R technical specifications.
General
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Saturation Voltage | 5V |
| Collector-emitter Voltage-Max | 60V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 63 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 960mW |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCP55-10T/R Datasheet
Download the complete datasheet for NXP BCP55-10T/R to view detailed technical specifications.
No datasheet is available for this part.
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