The BCW61DT/R is a PNP transistor from NXP, packaged in a SOT-23 case. It can handle a collector-emitter voltage of up to 32V and a collector current of up to 100mA. The device has a gain bandwidth product of 100MHz and a minimum current gain of 100. The transistor is RoHS compliant and operates over a temperature range of -65°C to 150°C.
PackageSOT-23
PolarityPNP
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Technical Specifications
NXP BCW61DT/R technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 32V |
| Collector Emitter Saturation Voltage | -550mV |
| Collector-emitter Voltage-Max | 32V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCW61DT/R Datasheet
Download the complete datasheet for NXP BCW61DT/R to view detailed technical specifications.
No datasheet is available for this part.