The BCW89 is a PNP transistor with a collector base voltage rating of 80V and a collector emitter breakdown voltage of -60V. It has a maximum collector current rating of 100mA and a maximum power dissipation of 250mW. The device is packaged in a TO-236AB surface mount package with dimensions of 1mm height, 3mm length, and 1.4mm width. The transistor operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
Frequency150MHz
PackageTO-236AB
Current Rating200mA
MountingSurface Mount
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Technical Specifications
NXP BCW89 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | -60V |
| Collector Emitter Saturation Voltage | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Collector Current | 100mA |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -60V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP BCW89 Datasheet
Download the complete datasheet for NXP BCW89 to view detailed technical specifications.
No datasheet is available for this part.