The BLF6G20-110 is an N-Channel LDMOS transistor with a breakdown voltage of 65V and a continuous drain current of 29A. It operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations. The device is packaged in a quantity of 20 per rail or tube and features a lead-free construction.
PolarityN-CHANNEL
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Technical Specifications
NXP BLF6G20-110 technical specifications.
General
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 65V |
| Gate to Source Voltage (Vgs) | 13V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Technology | LDMOS |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF6G20-110 Datasheet
Download the complete datasheet for NXP BLF6G20-110 to view detailed technical specifications.
No datasheet is available for this part.
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