The BLF888BS112 is a high-power N-Channel MOSFET from NXP, capable of handling continuous drain currents of up to 38A. It features a breakdown voltage of 104V and operates at frequencies up to 860MHz. This device is designed for surface mount applications and has a maximum operating temperature range of -65°C to 150°C.
Frequency860MHz
MountingSurface Mount
PolarityN-CHANNEL
Power250W
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Technical Specifications
NXP BLF888BS112 technical specifications.
General
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 104V |
| Drain to Source Voltage (Vdss) | 104V |
| Frequency | 860MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 11V |
| Max Frequency | 860MHz |
| Min Frequency | 470MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Output Power | 250W |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
Compliance
| RoHS | Compliant |
Datasheet
NXP BLF888BS112 Datasheet
Download the complete datasheet for NXP BLF888BS112 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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