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Technical Specifications
NXP BSH111-235 technical specifications.
General
| Package/Case | SOT |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 335mA |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 55V |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 40pF |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 830mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Rds On Max | 4R |
| Series | TrenchMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
NXP BSH111-235 Datasheet
Download the complete datasheet for NXP BSH111-235 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.