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Technical Specifications
NXP BSH111-235 technical specifications.
General
Package/Case
SOT
Contact Plating
Tin
Continuous Drain Current (ID)
335mA
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
4R
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
10V
Input Capacitance
40pF
Max Dual Supply Voltage
55V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
830mW
Package Quantity
10000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
830mW
Rds On Max
4R
Series
TrenchMOS™
Compliance
RoHS
Compliant
Datasheet
NXP BSH111-235 Datasheet
Download the complete datasheet for NXP BSH111-235 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.